AgInSe2 thin films prepared by electrodeposition process

In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10 M AgNO3, 6x10 -2 M InCl3 and 3x10 -2 M of H2SeO3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between -0.3 V and -1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films’ compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.